JPS6061996A - 不揮発性メモリのアドレスデコ−ダ回路 - Google Patents
不揮発性メモリのアドレスデコ−ダ回路Info
- Publication number
- JPS6061996A JPS6061996A JP58169891A JP16989183A JPS6061996A JP S6061996 A JPS6061996 A JP S6061996A JP 58169891 A JP58169891 A JP 58169891A JP 16989183 A JP16989183 A JP 16989183A JP S6061996 A JPS6061996 A JP S6061996A
- Authority
- JP
- Japan
- Prior art keywords
- node
- power supply
- transistor
- address decoder
- address
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015654 memory Effects 0.000 title claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 230000000694 effects Effects 0.000 abstract description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/10—Decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Static Random-Access Memory (AREA)
- Read Only Memory (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58169891A JPS6061996A (ja) | 1983-09-14 | 1983-09-14 | 不揮発性メモリのアドレスデコ−ダ回路 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58169891A JPS6061996A (ja) | 1983-09-14 | 1983-09-14 | 不揮発性メモリのアドレスデコ−ダ回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6061996A true JPS6061996A (ja) | 1985-04-09 |
JPS6322396B2 JPS6322396B2 (en]) | 1988-05-11 |
Family
ID=15894873
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58169891A Granted JPS6061996A (ja) | 1983-09-14 | 1983-09-14 | 不揮発性メモリのアドレスデコ−ダ回路 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6061996A (en]) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02108293A (ja) * | 1988-10-15 | 1990-04-20 | Sony Corp | 不揮発性メモリのアドレスデコーダ回路 |
US5018107A (en) * | 1988-10-25 | 1991-05-21 | Fujitsu Limited | Semiconductor memory device |
US5038327A (en) * | 1989-09-20 | 1991-08-06 | Fujitsu Limited | Decoder circuit of erasable programmable read only memory for avoiding erroneous operation caused by parasitic capacitors |
US5051959A (en) * | 1985-08-14 | 1991-09-24 | Fujitsu Limited | Complementary semiconductor memory device including cell access transistor and word line driving transistor having channels of different conductivity type |
US5373479A (en) * | 1992-05-26 | 1994-12-13 | Nec Corporation | Low-power consumption simple row addressing system incorporated in semiconductor memory device for boosting selected word line over power voltage level |
US5606530A (en) * | 1994-11-30 | 1997-02-25 | Texas Instruments Incorporated | High speed ROM decode circuit |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56163587A (en) * | 1980-05-19 | 1981-12-16 | Toshiba Corp | Semiconductor memory |
-
1983
- 1983-09-14 JP JP58169891A patent/JPS6061996A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56163587A (en) * | 1980-05-19 | 1981-12-16 | Toshiba Corp | Semiconductor memory |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5051959A (en) * | 1985-08-14 | 1991-09-24 | Fujitsu Limited | Complementary semiconductor memory device including cell access transistor and word line driving transistor having channels of different conductivity type |
JPH02108293A (ja) * | 1988-10-15 | 1990-04-20 | Sony Corp | 不揮発性メモリのアドレスデコーダ回路 |
US5018107A (en) * | 1988-10-25 | 1991-05-21 | Fujitsu Limited | Semiconductor memory device |
US5038327A (en) * | 1989-09-20 | 1991-08-06 | Fujitsu Limited | Decoder circuit of erasable programmable read only memory for avoiding erroneous operation caused by parasitic capacitors |
US5373479A (en) * | 1992-05-26 | 1994-12-13 | Nec Corporation | Low-power consumption simple row addressing system incorporated in semiconductor memory device for boosting selected word line over power voltage level |
US5606530A (en) * | 1994-11-30 | 1997-02-25 | Texas Instruments Incorporated | High speed ROM decode circuit |
Also Published As
Publication number | Publication date |
---|---|
JPS6322396B2 (en]) | 1988-05-11 |
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